GNT: Graphene and Nanotubes

Dear friends and colleagues,

A first reminder about the international conference on Extended Defects in Semiconductors 2010 to be held at the University of Sussex 19th-24th September 2010. The conference website is: www.eds-conferences.org/EDS2010 The remit of the conference includes extended defects, nanostructures, nanoparticles, quantum dots and interfaces within semiconducting materials ranging from narrow to wide band gaps, including graphene-derived materials and diamond. There will be a session to honour the work of Professor Bob Jones on his retirement.

We would be very glad to receive short abstracts (half an A4 page to EDS2010@sussex.ac.uk). Abstract deadline is revised to 12th June with notification by 14th June.

Confirmed Invited Speakers are:

Professor Nigel Browning, UCDavis, USA "High Spatial and Temporal Resolution TEM studies of Semiconductor Systems"

Dr. Jun Chen (NIMS, Tsukuba, Japan) "Electrical, optical and mechanical properties of GBs in mc-Si"

Dr Dariusz Chrobak (Silesia, Poland) "Nanoindentation of semiconductors: experiment and atomistic simulations"

Professor Nick Cowern (Newcastle, UK) "Defects and diffusion in Ge - a comparison with Si"

Professor G. P. Dimitrakopulos (Thessaloniki, Greece) "Interfacial sources of extended defects in nonpolar and semipolar III-Nitride heteroepitaxy"

Professor Robert Hull (RPI, New York, USA) "Use of controlled surface defects to engineer assembly of epitaxial semiconductor nanostructures"

Professor Bob Jones (Exeter, UK) "Point and Extended defects in brown and nano-crystalline diamonds"

Dr. Johann Michler (EMPA, Switzerland) "Sample size dependent brittle-ductile transition in semiconductors in uni-axial micro-compression experiments"

Dr. Michelle Moram (Cambridge, UK) "Dislocation movement in the III-nitrides"

Dr. Heidi Nordmark (SINTEF, Norway) "H-initiated extended defects from plasma treatment: comparison between c-Si and mc-Si"

Dr. Laurent Pizzagalli (Poitiers, France) "Core dislocations in silicon: new aspects from numerical simulations"

Professor Manfred Reiche (MPI, Halle, Germany) "Structure and properties of dislocations in bonded interfaces"

Professor Bo Yang (FIT, Florida, USA) "Nanoscale continuum calculation of basal dislocation core structures in graphite"

Professor Ichiro Yonenaga (Sendai, Japan) "The susceptibility of GaN and ZnO to dislocation formation"

With best wishes

Malcolm I Heggie

Professor of Theoretical Chemistry, Dept of Chemistry and Biochemistry, University of Sussex 01273 678402 www.sussex.ac.uk/chemistry/profile24753.html Extended Defects in Semiconductors EDS2010 www.eds-conferences.org/EDS2010/ Sussex, 19-24 Sept